Associate Prof., Master Supervisor in Materials Science and Engineering
Educational Background
1997-2001: Bachelor’s degree of Materials Science and Engineering, University of Science and Technology Beijing
2001-2004： Master’s degree of Materials Science and Engineering, University of Science and Technology Beijing
2004-2009: Doctor’s degree of Materials Science and Metallurgy, University of Cambridge
Employments
2008-2009: Failure analysis engineer, Cambridge Display Technology Ltd. UK
2009-2011: Postdoc researcher, National Institute for Materials Science, Japan
2011-2015: Staff application engineer, FEI Shanghai Nanoport
2015-2020: Lecturer, School of Materials Science and Engineering, USST
2021- : Associate Prof., School of Materials Science and Engineering, USST
Research interests
Advanced microscopy and micro-analysis
III-nitride semiconductor materials and devices
Important research and development projects
The stress relaxation mechanism and degradation mechanism of GaN-based green laser diodes, National Natural Science Foundation of China, 2018-2020
Important papers and publications
H. Xiu, et. al., Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy, Current Applied Physics, 19, 20-24 (2019)
H. Xiu et. al., Rapid degradation of InGaN/GaN green laser diodes, Superlattices and Microstructures 142,106517 (2020)
H. Sukegawa, H. X. Xiu, et al., Tunnel Magnetoresistance with Improved Bias Voltage Dependence in Lattice-Matched Fe/Spinel MgAl2O4/Fe(001) Junctions, Applied Physics Letters 96, 212505 (2010)
Contact me
E-mail: huixin.xiu@usst.edu.cn
